| PART |
Description |
Maker |
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK370 2SK37007 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK371 E001536 |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SJ74 E001300 |
P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
FIELD-EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers
ETC
N.A.
Isahaya Electronics Corporation
Electronic Theatre Controls, Inc.
|
| 2SK209 E001436 |
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| SVC385 |
Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| 2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| 2SK492 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss.
|
Isahaya Electronics Cor...
Isahaya Electronics Corporation
|
| SVC386 |
360 pF, 16 V, SILICON, VARIABLE CAPACITANCE DIODE
Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| 2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
http://
|
